hBN switches co-integrated on GaN chips enable programmable 6G mmWave circuits

Researchers have co-integrated radio-frequency switches made from two-dimensional hexagonal boron nitride (hBN) onto gallium nitride (GaN) microchips. The resulting programmable millimetre-wave monolithic microwave integrated circuits are designed for use in 6G hardware. The work represents a major step in building reconfigurable, miniaturised communication chips.